The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2019

Filed:

Jun. 14, 2018
Applicant:

Conary Enterprise Co., Ltd., Taipei, TW;

Inventors:

Kuo-Jui Lin, Hsinchu, TW;

Ming-Yang Hsu, Hsinchu, TW;

Yu-Chen Chen, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/10 (2006.01); H01S 5/042 (2006.01); H01S 5/22 (2006.01); H01S 5/18 (2006.01); H01S 5/343 (2006.01); H01S 5/183 (2006.01); H01S 5/34 (2006.01);
U.S. Cl.
CPC ...
H01S 5/105 (2013.01); H01S 5/0421 (2013.01); H01S 5/0425 (2013.01); H01S 5/18 (2013.01); H01S 5/18308 (2013.01); H01S 5/18319 (2013.01); H01S 5/18344 (2013.01); H01S 5/18394 (2013.01); H01S 5/2205 (2013.01); H01S 5/34 (2013.01); H01S 5/343 (2013.01);
Abstract

An electrically pumped surface-emitting photonic crystal laser includes an electric currents confinement structure arranged on a photonic crystal structure and an active layer with an opening, a transparent conducting layer arranged on the electric currents confinement structure and covering the photonic crystal structure, a metal anode arranged on the transparent conducting layer with an aperture. The photonic crystal laser has its epitaxy structure etched from above to fabricate the photonic crystal to allow laser beams to pass through with conductivity for the purpose of electrically pumping a quantum structure without complex technologies of wafer fusion bonding or epitaxial regrowth. Thereby the laser beams can be emitted from a front surface of the epitaxy structure with a narrow divergence angle.


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