The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2019
Filed:
May. 31, 2017
Applicant:
Arm Ltd., Cambridge, GB;
Inventors:
Glen Arnold Rosendale, Palo Alto, CA (US);
Lucian Shifren, San Jose, CA (US);
Assignee:
ARM Ltd., Cambridge, GB;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); G11C 13/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1616 (2013.01); G11C 13/0002 (2013.01); G11C 13/003 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); H01L 27/2409 (2013.01); H01L 27/2463 (2013.01); H01L 45/10 (2013.01); H01L 45/122 (2013.01); H01L 45/1253 (2013.01); H01L 45/147 (2013.01); H01L 45/1633 (2013.01); H01L 45/1641 (2013.01); G11C 13/0004 (2013.01); G11C 2013/0045 (2013.01); G11C 2013/0078 (2013.01); G11C 2213/15 (2013.01); G11C 2213/71 (2013.01); G11C 2213/72 (2013.01); G11C 2213/73 (2013.01);
Abstract
Subject matter disclosed herein may relate to fabrication of correlated electron materials (CEMs) devices used, for example, to read from a resistive memory element or to write to a resistive memory element. In embodiments, by limiting current flow through a CEM device, the CEM device may operate in the absence of Mott and/or Mott-like transitions in a way that brings about symmetrical diode-like operation of the CEM device.