The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2019

Filed:

Oct. 14, 2016
Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventors:

Jae Hoon Choi, Seoul, KR;

Hae Jin Park, Seoul, KR;

Rak Jun Choi, Seoul, KR;

Byeoung Jo Kim, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
F21K 9/232 (2016.01); H01L 33/06 (2010.01); H01L 33/12 (2010.01); H01L 33/20 (2010.01); H01L 33/22 (2010.01); H01L 33/32 (2010.01); H01L 33/40 (2010.01); H01L 33/46 (2010.01); H01L 33/60 (2010.01); H01L 33/62 (2010.01); F21Y 115/10 (2016.01);
U.S. Cl.
CPC ...
H01L 33/12 (2013.01); H01L 33/20 (2013.01); H01L 33/22 (2013.01); H01L 33/46 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); F21K 9/232 (2016.08); F21Y 2115/10 (2016.08); H01L 33/06 (2013.01); H01L 33/32 (2013.01); H01L 33/40 (2013.01); H01L 2933/0091 (2013.01);
Abstract

A semiconductor device according to an embodiment comprises: a substrate; a buffer layer provided on the substrate; a first conductivity type semiconductor layer provided on the buffer layer; a second conductivity type semiconductor layer; a light emitting structure, provided between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, comprising an active layer which emits ultraviolet light; and a plurality of air voids provided within the buffer layer, wherein the air voids can be formed to have two or more inclined surfaces.


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