The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2019

Filed:

Feb. 24, 2017
Applicant:

Riken, Saitama, JP;

Inventors:

Masafumi Jo, Saitama, JP;

Hideki Hirayama, Saitama, JP;

Assignee:

RIKEN, Saitama, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/12 (2010.01); H01L 33/22 (2010.01); H01L 33/18 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/12 (2013.01); H01L 33/007 (2013.01); H01L 33/18 (2013.01); H01L 33/22 (2013.01);
Abstract

To fabricate a practically useful non-polar AlN buffer layer on a sapphire crystal plate and manufacture a UV light-emitting device on a non-polar crystal substrate by adopting the crystal substrate as an example, an embodiment of the present invention provides a crystal substrateD comprising an r-plane sapphire crystal plateand an AlN buffer layerD of non-polar orientation. The AlN buffer layer comprises a surface protection layerand a smoothing layer. The surface protection layer suppresses roughness increase on a surface of the AlN buffer layer, and the smoothing layer makes the surface of the AlN buffer layer a smoothed surface. Also provided is a crystal substratecomprising an AlN buffer layerT to which a dislocation blocking layerfor reducing crystallographic defects is added between the surface protection layerand the smoothing layer. In another embodiment a deep UV light-emitting device is provided.


Find Patent Forward Citations

Loading…