The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2019
Filed:
Jun. 02, 2017
Sifotonics Technologies Co., Ltd., Woburn, MA (US);
Mengyuan Huang, Beijing, CN;
Liangbo Wang, Beijing, CN;
Su Li, Beijing, CN;
Tuo Shi, Beijing, CN;
Pengfei Cai, Beijing, CN;
Wang Chen, Beijing, CN;
Ching-yin Hong, Lexington, MA (US);
Dong Pan, Andover, MA (US);
SIFOTONICS TECHNOLOGIES CO., LTD., Woburn, MA (US);
Abstract
Various embodiments of a compensated photonic device structure and fabrication method thereof are described herein. In one aspect, a photonic device may include a substrate and a functional layer disposed on the substrate. The substrate may be made of a first material and the functional layer may be made of a second material that is different from the first material. The photonic device may also include a compensation region formed at an interface region between the substrate and the functional layer. The compensation region may be doped with compensation dopants such that a first carrier concentration around the interface region of function layer is reduced and a second carrier concentration in a bulk region of functional layer is reduced.