The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2019

Filed:

Apr. 11, 2016
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka-shi, Osaka, JP;

Inventors:

Akiyoshi Ogane, Osaka, JP;

Yasufumi Tsunomura, Hyogo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0747 (2012.01); H01L 31/0376 (2006.01); H01L 31/075 (2012.01); H01L 31/0224 (2006.01); H01L 31/0368 (2006.01); H01L 31/20 (2006.01);
U.S. Cl.
CPC ...
H01L 31/03762 (2013.01); H01L 31/022425 (2013.01); H01L 31/03682 (2013.01); H01L 31/075 (2013.01); H01L 31/0747 (2013.01); H01L 31/202 (2013.01); Y02E 10/547 (2013.01); Y02E 10/548 (2013.01);
Abstract

A photoelectric conversion device includes a crystalline semiconductor substrate having a first surface and a second surface and a first amorphous semiconductor layer formed over the first surface of the crystalline semiconductor substrate. An interface between the crystalline semiconductor substrate and the first amorphous semiconductor layer is an oxidized interface containing oxygen having a concentration of 1×10/cmor greater. The first amorphous semiconductor layer includes a high-oxygen-concentration region having an oxygen concentration of 1×10/cmor greater and 1×10/cmor less within a range of 5 nm or less from the oxidized interface.


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