The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2019

Filed:

Nov. 29, 2017
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Toshihiro Shoyama, Kawasaki, JP;

Hiroshi Takakusagi, Atsugi, JP;

Tasuku Kaneda, Kawasaki, JP;

Toshiyuki Ogawa, Abiko, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0288 (2006.01); H01L 31/103 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 21/203 (2006.01); H01L 27/146 (2006.01); H04N 5/378 (2011.01); H04N 5/367 (2011.01); H04N 5/369 (2011.01);
U.S. Cl.
CPC ...
H01L 31/0288 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/02658 (2013.01); H01L 21/04 (2013.01); H01L 21/0415 (2013.01); H01L 21/203 (2013.01); H01L 27/146 (2013.01); H01L 31/103 (2013.01); H04N 5/367 (2013.01); H04N 5/369 (2013.01); H04N 5/378 (2013.01); Y02E 10/50 (2013.01);
Abstract

A photoelectric conversion device has a silicon substrate which includes a first portion configured to perform photoelectric conversion, and a second portion which is arranged farther apart from a light receiving surface of the silicon substrate than the first portion and contains carbon. A first peak concentration as a carbon peak concentration in the second portion is not less than 1×10[atoms/cm] and not more than 1×10[atoms/cm], and a second peak concentration as an oxygen peak concentration in the second portion is not less than 1/1000 and not more than 1/10 of the first peak concentration.


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