The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2019
Filed:
May. 15, 2017
Applicant:
Vishay-siliconix, Santa Clara, CA (US);
Inventor:
Deva Pattanayak, Saratoga, CA (US);
Assignee:
Vishay-Siliconix, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7811 (2013.01); H01L 29/0634 (2013.01); H01L 29/0646 (2013.01); H01L 29/0692 (2013.01); H01L 29/1095 (2013.01); H01L 29/4236 (2013.01); H01L 29/7802 (2013.01); H01L 29/7813 (2013.01); H01L 29/7827 (2013.01); H01L 29/407 (2013.01);
Abstract
Edge termination for MOSFETs. In accordance with an embodiment of the present invention, a metal oxide semiconductor field effect transistor (MOSFET) includes a core region including a plurality of parallel core plates coupled to a source terminal of the MOSFET. The MOSFET also includes a termination region surrounding the core region comprising a plurality of separated floating termination segments configured to force breakdown into the core region and not in the termination region. Each termination segment has a length dimension less than a length dimension of the core plates.