The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2019
Filed:
Jan. 19, 2017
Boe Technology Group Co., Ltd., Beijing, CN;
Beijing Boe Display Technology Co., Ltd., Beijing, CN;
Liangliang Li, Beijing, CN;
Huibin Guo, Beijing, CN;
Zheng Liu, Beijing, CN;
Shoukun Wang, Beijing, CN;
Yuchun Feng, Beijing, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
BEIJING BOE DISPLAY TECHNOLOGY CO., LTD., Beijing, CN;
Abstract
A method of manufacturing a thin-film transistor (TFT) array substrate, including: forming a gate layer, a gate insulating layer, an oxide semiconductor layer, a source/drain electrode layer and a pixel electrode layer on a base substrate. The step of forming the source/drain electrode layer and the pixel electrode layer includes: forming a transparent conductive film and a first metallic film on the oxide semiconductor layer in sequence, to form a stack layer of the transparent conductive film and the first metallic film, in which the transparent conductive film contacts the oxide semiconductor layer; and forming source electrodes, drain electrodes and pixel electrodes by a single patterning process on the stack layer of the transparent conductive film and the first metallic film. One patterning process is saved, the production time is shortened, and the production cost is reduced.