The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2019
Filed:
Jan. 14, 2015
Nuvoton Technology Corporation, Hsinchu, TW;
Chin-Han Pan, Hsinchu, TW;
Yao-Feng Huang, Hsinchu, TW;
Nuvoton Technology Corporation, Hsinchu, TW;
Abstract
A method of fabricating a semiconductor device is provided. A substrate is provided. The substrate includes a first region, a second region and a third region. An isolation structure is formed on the substrate in the first and the second region. A removing process is performed to remove the isolation structure in the first region, so as to form a first opening exposing a top surface of the substrate. A gate structure is formed on the substrate, covering a part of the substrate in the first region and a part of the isolation structure in the second region. A first doped region of a first conductive type is formed at one side of the gate structure in the first region, and a second doped region of the first conductive type is formed in the substrate in the third region.