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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10340293 B1

PDFFull Text
Date of Patent:
Jul. 02, 2019

Filed:

Jan. 10, 2018

Transistor display panel including a transistor and an overlapping region of a gate line and data line

Applicant:

Samsung Display Co., Ltd., Yongin-si, Gyeonggi-Do, KR;

Inventors:

Jung-Hun Noh, Yongin-si, KR;

Hyun Sup Lee, Hwaseong-si, KR;

Sang-Hee Jang, Bucheon-si, KR;

Hyung-Il Jeon, Seoul, KR;

Byung Seok Choi, Seoul, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-si, Gyeonggi-Do, KR;

Attorney:

F. Chau & Associates, LLC

Primary Examiner:

Ismail A Muse

Int. Cl.
CPC ...
H01L 31/036 (2006.01); H01L 29/04 (2006.01); H01L 29/15 (2006.01); H01L 27/14 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01); G02F 1/1368 (2006.01); H01L 27/32 (2006.01); G02F 1/1362 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1222 (2013.01); H01L 27/124 (2013.01); H01L 27/1225 (2013.01); H01L 27/1248 (2013.01); H01L 29/41733 (2013.01); H01L 29/42392 (2013.01); H01L 29/7869 (2013.01); H01L 29/78642 (2013.01); H01L 29/78696 (2013.01); G02F 1/1368 (2013.01); G02F 1/136227 (2013.01); H01L 27/3248 (2013.01);
Abstract

A transistor display panel includes a substrate, a gate line disposed on the substrate, a data line disposed on the substrate, and a transistor disposed on the substrate. The transistor includes a first electrode, a second electrode overlapping the first electrode, a semiconductor layer disposed between the first electrode and the second electrode, and a gate electrode. The semiconductor layer is disposed in an overlapping region where the gate line and the data line overlap each other.

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