The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2019
Filed:
Oct. 11, 2017
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Dirk Breuer, Dresden, DE;
Georg Talut, Dresden, DE;
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/76895 (2013.01); H01L 23/5283 (2013.01); H01L 23/53228 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05017 (2013.01); H01L 2224/05025 (2013.01); H01L 2224/05124 (2013.01); H01L 2924/3512 (2013.01);
Abstract
A semiconductor device comprises non-quadrangular metal regions in the last metallization layer and/or non-quadrangular contact pads, wherein, in some illustrative embodiments, an interdigitating lateral configuration may be obtained and/or an overlap of the contact pads with underlying metal regions may be provided. Consequently, mechanical robustness of the contact pads and the passivation material under the underlying interlayer dielectric material may be increased, thereby suppressing crack formation and crack propagation.