The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2019

Filed:

Jan. 10, 2018
Applicant:

Rohm Co., Ltd., Kyoto-shi, Kyoto, JP;

Inventor:

Motoharu Haga, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/48 (2006.01); H01L 23/31 (2006.01); H01L 23/495 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49513 (2013.01); H01L 21/4842 (2013.01); H01L 23/3114 (2013.01); H01L 23/4952 (2013.01); H01L 23/49548 (2013.01); H01L 23/49562 (2013.01); H01L 23/49541 (2013.01); H01L 2224/02125 (2013.01); H01L 2224/02135 (2013.01); H01L 2224/02165 (2013.01); H01L 2224/02175 (2013.01); H01L 2224/02235 (2013.01); H01L 2224/02245 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/45014 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48472 (2013.01); H01L 2224/4903 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/181 (2013.01); H01L 2924/18301 (2013.01);
Abstract

A semiconductor device includes a semiconductor element, a lead on which the semiconductor element is mounted, a bonding member fixing the semiconductor element to the lead, and a resin package enclosing the semiconductor element and a portion of the lead. This lead is formed with a groove recessed at a location spaced from the semiconductor element. The groove has first and second inner surfaces, where the first inner surface is closer to the semiconductor element than is the second inner surface. The angle the first inner surface forms with respect to the thickness direction of the semiconductor element is smaller than the angle the second inner surface forms with respect to the thickness direction.


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