The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2019

Filed:

Aug. 25, 2017
Applicant:

Imec Vzw, Leuven, BE;

Inventors:

Yves Mols, Wijnegem, BE;

Niamh Waldron, Heverlee, BE;

Bernardette Kunert, Wilsele, BE;

Assignee:

IMEC vzw, Leuven, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 21/8252 (2006.01); H01L 21/8258 (2006.01); H01L 21/762 (2006.01); H01L 21/683 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7813 (2013.01); H01L 21/6835 (2013.01); H01L 21/76251 (2013.01); H01L 21/7806 (2013.01); H01L 21/8252 (2013.01); H01L 21/8258 (2013.01); H01L 21/0254 (2013.01); H01L 21/02532 (2013.01); H01L 21/02543 (2013.01); H01L 21/02546 (2013.01); H01L 21/02549 (2013.01);
Abstract

The disclosed technology generally relates to manufacturing of semiconductor devices, and more particularly to manufacturing of a semiconductor device by transferring an active layer from a donor substrate. One aspect is a method of manufacturing a semiconductor device includes providing a donor wafer for transferring an active layer, comprising a group IV, a group III-IV or a group II-VI semiconductor material, to a handling wafer. The method includes forming the active layer on a sacrificial layer of the donor wafer, bonding the donor wafer to the handling wafer, and selectively etching the sacrificial layer to remove the donor wafer from the handling wafer, thereby leaving the active layer on the handling wafer.


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