The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2019
Filed:
Oct. 25, 2016
Applicant:
Imec, Leuven, BE;
Inventors:
Assignee:
IMEC, Leuven, BE;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); C30B 25/04 (2006.01); C30B 23/04 (2006.01); C30B 19/12 (2006.01); C30B 19/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02639 (2013.01); C30B 19/00 (2013.01); C30B 19/12 (2013.01); C30B 23/04 (2013.01); C30B 25/04 (2013.01); H01L 21/02381 (2013.01); H01L 21/02422 (2013.01); H01L 21/02532 (2013.01); H01L 21/02538 (2013.01); H01L 21/02647 (2013.01); H01L 21/02664 (2013.01); H01L 21/762 (2013.01); H01L 29/0653 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01);
Abstract
Disclosed are methods and mask structures for epitaxially growing substantially defect-free semiconductor material. In some embodiments, mask structure includes a first level defining a first trench extending through the first level, wherein a bottom of the first trench is defined by a semiconductor substrate, and a second level on top of the first level, wherein the second level defines a plurality of second trenches positioned at a non-zero angle with respect to the first trench.