The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2019
Filed:
Jul. 09, 2015
Sony Corporation, Tokyo, JP;
Yasushi Fujinami, Tokyo, JP;
Kenichi Nakanishi, Tokyo, JP;
Tsunenori Shiimoto, Kanagawa, JP;
Tetsuya Yamamoto, Kanagawa, JP;
Tatsuo Shinbashi, Tokyo, JP;
Hideaki Okubo, Saitama, JP;
Haruhiko Terada, Kanagawa, JP;
Ken Ishii, Tokyo, JP;
Hiroyuki Iwaki, Kanagawa, JP;
Matatoshi Honjo, Tokyo, JP;
SONY CORPORATION, Tokyo, JP;
Abstract
Detecting a defective cell in a memory in consideration of an error property difference depending on the storage state. A determination unit determines whether there is a possibility of defect for each of unit-of-storages on a memory cell formed with a non-volatile memory. The non-volatile memory undergoes either a reset operation that transitions a state from a low resistive state (LRS) to a high resistive state (HRS) or a set operation that transitions the state from the high resistive state to the low resistive state. The determination unit determines a unit-of-storage in which the number of errors in predetermined one of the reset operation and the set operation has exceeded a predetermined standard, as a unit-of-storage suspected of having a defect.