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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10338472 B1

PDFFull Text
Date of Patent:
Jul. 02, 2019

Filed:

Dec. 12, 2017

Mark forming method and device manufacturing method

Applicant:

Nikon Corporation, Tokyo, JP;

Inventor:

Tomoharu Fujiwara, Gyoda, JP;

Assignee:

NIKON CORPORATION, Tokyo, JP;

Attorney:

Oliff PLC

Primary Examiner:

Mamadou L Diallo

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 23/544 (2006.01); G03F 7/20 (2006.01); H01L 21/308 (2006.01); G03F 7/00 (2006.01); G03F 9/00 (2006.01); G03F 7/16 (2006.01); H01L 21/027 (2006.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
G03F 7/20 (2013.01); G03F 7/0002 (2013.01); G03F 7/168 (2013.01); G03F 7/70341 (2013.01); G03F 9/708 (2013.01); H01L 21/0274 (2013.01); H01L 21/02118 (2013.01); H01L 21/3086 (2013.01); H01L 23/544 (2013.01); B82Y 40/00 (2013.01); H01L 2223/5446 (2013.01); H01L 2223/54426 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A mark forming method includes: a step of forming, on a device layer of a wafer, an intermediate layer to which a polymer layer containing a block copolymer is adherable, the device layer including a shot area and a scribe line area; a step of removing a portion, of the intermediate layer, formed in the scribe line area; a step of exposing an image of a mark on the scribe line area and forming, based on the image of the mark, a mark including recessed portion; and a step of applying the polymer layer containing the block copolymer on the device layer of the wafer. When a circuit pattern is formed by using the self-assembly of the block copolymer, it is possible to form the mark simultaneously with the formation of the circuit pattern.

Find Patent Forward Citations

Fujiwara, Tomoharu. (2019). Mark forming method and device manufacturing method (U.S. Patent No. 10338472). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10338472

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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