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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10338446 B1

PDFFull Text
Date of Patent:
Jul. 02, 2019

Filed:

Dec. 09, 2015

Semiconductor device having low resistance source and drain regions

Applicant:

Sharp Kabushiki Kaisha, Sakai, Osaka, JP;

Inventor:

Hiroshi Matsukizono, Sakai, JP;

Assignee:

SHARP KABUSHIKI KAISHA, Sakai, Osaka, JP;

Attorney:

ScienBiziP, P.C.

Primary Examiner:

Ida M Soward

Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/41 (2006.01); H01L 29/49 (2006.01); H01L 51/52 (2006.01); H01L 21/82 (2006.01); G02F 1/1368 (2006.01); H01L 21/8234 (2006.01); H01L 27/06 (2006.01); H01L 27/08 (2006.01); H01L 29/786 (2006.01); G02F 1/1362 (2006.01); H01L 21/385 (2006.01); H01L 21/44 (2006.01); H01L 29/417 (2006.01); H01L 21/8238 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
G02F 1/1368 (2013.01); G02F 1/136213 (2013.01); H01L 21/385 (2013.01); H01L 21/44 (2013.01); H01L 21/8234 (2013.01); H01L 27/06 (2013.01); H01L 27/08 (2013.01); H01L 29/786 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01); G02F 2001/13685 (2013.01); G02F 2202/10 (2013.01); H01L 21/82385 (2013.01); H01L 21/823456 (2013.01); H01L 27/1225 (2013.01); H01L 29/0847 (2013.01); H01L 29/0865 (2013.01); H01L 29/0869 (2013.01); H01L 29/41733 (2013.01); H01L 29/4908 (2013.01); H01L 51/5209 (2013.01);
Abstract

A semiconductor device has a top-gate structure resistant to creation of parasitic capacitance between a low-resistance region formed in a semiconductor layer and a gate electrode. A TFT () has a low-resistance region, a portion of which has a first length (L) ranging from a first position (P) corresponding to an end of a gate insulating film to a region below a gate electrode (), and the first length is substantially equal to a second length (L) ranging from the first position (P) to a second position (P) corresponding to an end of the gate electrode (). Thus, the overlap between the gate electrode () and either a source region () or a drain region () can be reduced, resulting in diminished parasitic capacitance.

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