The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2019

Filed:

Apr. 26, 2018
Applicant:

Dialog Semiconductor (Uk) Limited, London, GB;

Inventors:

Horst Knoedgen, Munich, DE;

Christoph N. Nagl, Graz, AT;

Nebojsa Jelaca, Graz, AT;

Frank Kronmueller, Neudenau, DE;

Ambreesh Bhattad, Swindon, GB;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H02M 3/158 (2006.01); H02M 1/088 (2006.01); H03K 3/037 (2006.01);
U.S. Cl.
CPC ...
H02M 3/1588 (2013.01); H02M 1/088 (2013.01); H02M 3/158 (2013.01); H02M 3/1584 (2013.01); H03K 3/037 (2013.01);
Abstract

A half bridge circuit and a method for its operation are presented. The half bridge circuit contains a high-side switch, a latch for providing a drive signal for the high-side switch, a first transistor device acting as a level shifter for shifting a voltage level at an input of the latch. The first transistor device is coupled between a supply voltage level and ground, and the voltage level at the input of the latch is shifted in accordance with a current that flows through the first transistor device. A second transistor device is coupled between the supply voltage level and ground, in parallel to the first transistor device. There is a current mirror for mirroring a current that flows through the second transistor device. There is a circuit path for feeding the mirrored current to an intermediate node between the supply voltage level and the first transistor device.


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