The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2019
Filed:
Aug. 23, 2018
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Zhi Yuan Cui, Shenzhen, CN;
Sang Hoon Jung, Seoul, KR;
Dong Seong Oh, Incheon, KR;
Byung Ki Kim, Seongnam-si, KR;
MagnaChip Semiconductor, Ltd., Cheongju-si, KR;
Abstract
A high voltage start-up circuit includes a power supply terminal configured to supply power, a latch unit connected to the power supply terminal and comprising a first P-type Metal-Oxide-Semiconductor (PMOS) transistor, a first N-type metal-oxide semiconductor (NMOS) transistor connected to the first PMOS transistor, a second PMOS transistor, and a second NMOS transistor connected to the second PMOS transistor, wherein the transistors form a latch structure, a charge sharing unit comprising a first capacitor configured to supply a first voltage to a drain of the second PMOS transistor and a second capacitor configured to supply a second voltage to a drain of the first PMOS transistor, and a switching unit configured to form a current path that charges an external capacitor using a voltage supplied from the power supply terminal as a power voltage, based on the first voltage and the second voltage.