The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2019
Filed:
Aug. 15, 2017
Applicant:
SK Hynix Inc., Icheon-Si, KR;
Inventors:
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/12 (2006.01); G06F 13/16 (2006.01); G06F 13/28 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); G06F 13/1668 (2013.01); G06F 13/28 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 45/1675 (2013.01);
Abstract
A method for fabricating an electronic device including a semiconductor memory includes: forming an etching target layer over a substrate; forming an initial hard mask pattern including a carbon-containing material over the etching target layer; forming a hard mask pattern by doping an impurity which increases a hardness of the carbon-containing material into a surface portion of the initial hard mask pattern; and etching the etching target layer by using the hard mask pattern as an etching barrier.