The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2019

Filed:

Mar. 30, 2018
Applicant:

Kaneka Corporation, Osaka, JP;

Inventors:

Hisashi Uzu, Osaka, JP;

Masashi Hino, Osaka, JP;

Mitsuru Ichikawa, Osaka, JP;

Ryota Mishima, Osaka, JP;

Tomomi Meguro, Osaka, JP;

Kenji Yamamoto, Osaka, JP;

Assignee:

KANEKA CORPORATION, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0725 (2012.01); H01G 9/20 (2006.01); H01L 51/44 (2006.01); H01L 31/028 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0725 (2013.01); H01G 9/2009 (2013.01); H01L 31/028 (2013.01); H01L 51/44 (2013.01); Y02E 10/549 (2013.01); Y02P 70/521 (2015.11);
Abstract

A multi-junction photoelectric conversion device includes, in the following order from a light-receiving side: a first photoelectric conversion unit; an intermediate layer; and a second photoelectric conversion unit. The first photoelectric conversion unit includes: a first light absorbing layer comprising a perovskite-type crystal structure photosensitive material; a first charge transport layer on the light-receiving side of the first light absorbing layer; and a second charge transport layer on a rear side of the first light absorbing layer. The second charge transport layer is in contact with the intermediate layer. The second photoelectric conversion unit includes: a second light absorbing layer that is a crystalline silicon substrate; and a first conductive semiconductor layer that is in contact with the intermediate layer.


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