The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2019
Filed:
Apr. 24, 2018
Korea University Research and Business Foundation, Seoul, KR;
Hu-Cheol Lee, Daejeon, KR;
Hong-Gyu Park, Seoul, KR;
Min-Soo Hwang, Seoul, KR;
Jungkil Kim, Seoul, KR;
Abstract
A photoelectric semiconductor nanowire device and a method for manufacturing the same. The photoelectric semiconductor nanowire device includes a semiconductor nanowire doped with a dopant of a first conductivity type and including crystal semiconductor segments which include at least one porous semiconductor segment and are connected to opposite ends of the porous semiconductor segment. A first electrode and a second electrode respectively are disposed in the crystal semiconductor segments around the porous semiconductor segment to provide an electrical connection. The crystal semiconductor segment includes a crystal semiconductor, and the porous semiconductor segment includes a porous semiconductor. The semiconductor nanowire provides a current according to the intensity of an external light when the external light is irradiated to the porous semiconductor segment.