The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2019

Filed:

Jan. 22, 2016
Applicant:

Kaneka Corporation, Osaka-shi, Osaka, JP;

Inventors:

Toshihiko Uto, Settsu, JP;

Takashi Suezaki, Settsu, JP;

Wataru Yoshida, Settsu, JP;

Assignee:

KANEKA CORPORATION, Osaka-shi, Osaka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/0236 (2006.01); H01L 31/0747 (2012.01);
U.S. Cl.
CPC ...
H01L 31/02363 (2013.01); H01L 31/0747 (2013.01); H01L 31/1804 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract

The method for manufacturing a crystalline silicon substrate for a solar cell includes: forming a texture on the surface of a single-crystalline silicon substrate by bringing an alkali solution and the surface of the single-crystalline silicon substrate into contact with each other; bringing an acidic solution and the surface of the single-crystalline silicon substrate into contact with each other to perform an acid treatment thereon; and then by bringing ozone water and the surface of the single-crystalline silicon substrate into contact with each other to perform an ozone treatment thereon. One aspect of embodiment is that the acidic solution used for the acid treatment is hydrochloric acid. Another aspect of embodiment is that the ozone treatment is performed by immersing the single-crystalline silicon substrate into the ozone water bath.


Find Patent Forward Citations

Loading…