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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10332997 B1

PDFFull Text
Date of Patent:
Jun. 25, 2019

Filed:

Oct. 23, 2018

Semiconductor device and method of manufacturing semiconductor device

Applicant:

Hitachi, Ltd., Chiyoda-ku, Tokyo, JP;

Inventors:

Shintaroh Sato, Tokyo, JP;

Masahiro Masunaga, Tokyo, JP;

Akio Shima, Tokyo, JP;

Assignee:

HITACHI, LTD., Tokyo, JP;

Attorney:

Miles & Stockbridge P.C.

Primary Examiner:

Victor A Mandala

Int. Cl.
CPC ...
H01L 21/04 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/311 (2006.01); H01L 27/092 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7834 (2013.01); H01L 21/0465 (2013.01); H01L 21/0475 (2013.01); H01L 21/31116 (2013.01); H01L 27/092 (2013.01); H01L 29/0847 (2013.01); H01L 29/1033 (2013.01); H01L 29/1608 (2013.01); H01L 29/42356 (2013.01); H01L 29/517 (2013.01); H01L 29/6659 (2013.01); H01L 29/66068 (2013.01);
Abstract

There is provided a semiconductor device that improves reliability. The impurity concentrations of a psource region and a pdrain region are 5×10cmor more. The channel-region-side end portion of a first insulating film is disposed on a psource region. The end portion has an inclined surface where the first insulating film thickness is reduced from the psource region toward a channel region. The channel-region-side end portion of a second insulating film is disposed on a pdrain region. The end portion has an inclined surface where the second insulating film thickness is reduced from the pdrain region toward the channel region. A gate electrode is disposed on the channel region, the psource region, the pdrain region, and the inclined surfaces of the first and the second insulating films through a gate insulating film including an aluminum oxide film.

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