The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2019
Filed:
Dec. 20, 2017
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen, CN;
Chunsheng Jiang, Shenzhen, CN;
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD., Shenzhen, Guangdong, CN;
Abstract
The invention provides a BCE TFT substrate and manufacturing method thereof. The method uses low deposition power and low oxygen content to deposit first silicon oxide thin film; then increases deposition power with low oxygen content to deposit second silicon oxide thin film. The first and second silicon oxide thin films form a passivation layer; the second silicon oxide film is implanted with oxygen to form a superficial layer so that the Si:O atomic ratio in the superficial layer is close to or same as Si:O atomic ratio of SiO, to ensure the passivation layer in contact with the air side is strongly hydrophobic to prevent outside water vapor into the back-channel, while ensuring the side of passivation layer contacting IGZO active layer has a lower oxygen content to reduce the probability of forming unbalanced O-ions at the interface between passivation layer and IGZO active layer.