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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10332984 B1

PDFFull Text
Date of Patent:
Jun. 25, 2019

Filed:

Mar. 29, 2017

Semiconductor devices having reduced contact resistance

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Hyo Seok Choi, Hwaseong-si, KR;

Ryuji Tomita, Yongin-si, KR;

Joon Gon Lee, Seoul, KR;

Chul Sung Kim, Seongnam-si, KR;

Jae Eun Lee, Ansan-si, KR;

Assignee:

Samsung Electronics Co., Ltd., , KR;

Attorney:

Myers Bigel, P.A.

Primary Examiner:

Moin M Rahman

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 23/535 (2006.01); H01L 29/417 (2006.01); H01L 21/768 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/40 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/76897 (2013.01); H01L 21/823821 (2013.01); H01L 23/535 (2013.01); H01L 27/0924 (2013.01); H01L 29/401 (2013.01); H01L 29/41791 (2013.01); H01L 29/665 (2013.01); H01L 29/785 (2013.01); H01L 21/845 (2013.01); H01L 27/1211 (2013.01); H01L 29/66545 (2013.01);
Abstract

A semiconductor device includes a substrate including an active region, a gate structure, source/drain regions, ones of the source/drain regions having an upper surface in which a recessed region is formed, a contact plug on the source/drain regions and extending in a direction substantially perpendicular to an upper surface of the substrate from an interior of the recessed region, a metal silicide film on an internal surface of the recessed region and including a first portion between a bottom surface of the recessed region and a lower surface of the contact plug and a second portion between a side wall of the recessed region and a side surface of the contact plug, and a metal layer connected to an upper portion of the metal silicide film and on a side surface of a region of the contact plug.

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