Semiconductor device, method of manufacturing the same and power converter

Abstract

There is provided a method of manufacturing a semiconductor device. The method of manufacturing the semiconductor device comprises a process of forming a semiconductor layer that is mainly made of a group III nitride and has n-type characteristics, by crystal growth; a film formation process of forming a through film that is mainly made of an element different from an element serving as an n-type impurity relative to the group III nitride, by growth on the semiconductor layer continuous with crystal growth of the semiconductor layer; an ion implantation process of implanting a p-type impurity into the semiconductor layer across the through film by ion implantation; a heating process of heating the semiconductor layer and the through film after completion of the ion implantation process, so as to activate a region of the semiconductor layer in which the p-type impurity is ion-implanted, to a p-type semiconductor region; and a removal process of removing the through film from the semiconductor layer, after completion of the heating process. This configuration improves the surface morphology of the p-type semiconductor region formed by ion implantation.