The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2019

Filed:

Aug. 23, 2017
Applicant:

Samsung Display Co., Ltd., Yongin-si, Gyeonggi-Do, KR;

Inventors:

Changyong Jeong, Yongin-si, KR;

Heejun Kwak, Yongin-si, KR;

Taewook Kang, Seongnam-si, KR;

Mugyeom Kim, Hwaseong-si, KR;

Jaeseob Lee, Seoul, KR;

Jonghan Jeong, Yongin-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3262 (2013.01); H01L 27/3211 (2013.01); H01L 27/3246 (2013.01); H01L 27/3248 (2013.01); H01L 2251/5338 (2013.01);
Abstract

An organic light emitting display device includes a folding part configured to be folded, and a flat part adjacent to the folding part. The folding part includes a first pixel. The flat part includes a second pixel. The first pixel includes a first organic light emitting diode, a first driving transistor and a first control transistor. The first driving transistor includes a first semiconductor pattern. The first control transistor includes a second semiconductor pattern. The second pixel includes a second organic light emitting diode, a second driving transistor and second control transistor. The second driving transistor includes a third semiconductor pattern. The second control transistor includes a fourth semiconductor pattern. At least one of the first or second semiconductor patterns includes an oxide semiconductor or a polycrystalline silicon, and each of the third and fourth semiconductor patterns includes the other of the oxide semiconductor and the polycrystalline silicon.


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