Solid-state imaging device, method for manufacturing solid-state imaging device, and electronic apparatus

Abstract

A pinned photodiode has a substrate having a first substrate side to which light is illuminated and a second substrate side opposite the first substrate side, a photoelectric conversion part including a first conductivity type semiconductor layer buried into the substrate and having a photoelectric conversion function for the received light and a charge accumulation function, a second conductivity type separation layer formed in the side portion of the first conductivity type semiconductor layer in the photoelectric conversion part, and one charge transfer gate part capable of transferring the charge accumulated in the photoelectric conversion part. The photoelectric conversion part, in at least a portion of the first conductivity type semiconductor layer, includes at least one second-conductivity type semiconductor layer forming at least one sub-area in a direction perpendicular to a normal line of the substrate and having a junction capacitance component together with the first conductivity type semiconductor layer.