The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2019

Filed:

Jun. 12, 2015
Applicant:

New Imaging Technologies, Verrieres le Buisson, FR;

Inventor:

Yang Ni, Palaiseau, FR;

Assignee:

NEW IMAGING TECHNOLOGIES, Verrieres le Buisson, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/335 (2011.01); H01L 27/146 (2006.01); H04N 5/3745 (2011.01); H04N 5/357 (2011.01); H04N 5/363 (2011.01); H04N 5/378 (2011.01);
U.S. Cl.
CPC ...
H01L 27/14634 (2013.01); H01L 27/14643 (2013.01); H04N 5/3575 (2013.01); H04N 5/363 (2013.01); H04N 5/378 (2013.01); H04N 5/3745 (2013.01); H01L 27/14694 (2013.01); H01L 2224/16225 (2013.01);
Abstract

The invention concerns a structure of a readout circuit, formed on a semiconductor substrate () of a first type, and intended to measure the charges received from an external charge source () external to the substrate () according to successive charge integration cycles, said structure comprising: an injection diode configured to inject, into the substrate (), the charges received from the external charge source (), a collector diode suitable for collecting, in the substrate (), at least a portion of the charges injected by the injection diode and for accumulating said charges during an integration cycle, a charge recovery structure (), configured to recover the charges accumulated in said collector diode, means for initializing the charge recovery structure () at the end of each integration cycle, by restoring the electrical potential of said charge recovery structure to an initial potential.


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