The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2019
Filed:
Mar. 16, 2017
Toshiba Memory Corporation, Minato-ku, JP;
TOSHIBA MEMORY CORPORATION, Minato-ku, JP;
Abstract
A semiconductor memory device includes a conductive layer; a plurality of electrode layers stacked on the conductive layer; a semiconductor pillar extending through the electrode layers in a stacking direction and electrically connected to the conductive layer; and an insulating layer positioned between the semiconductor pillar and the electrode layers and extending along the semiconductor pillar. The semiconductor pillar has a channel portion extending through the electrode layers and a high impurity concentration portion positioned at a bottom end on a side of the conductive layer. The high impurity concentration portion includes an impurity of a higher concentration than an impurity concentration in the channel portion. The insulating layer has an end portion extending toward a center of the bottom end of the semiconductor pillar, and a boundary of the channel portion and the high impurity concentration portion is positioned above the end portion of the insulating layer.