The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2019
Filed:
Mar. 13, 2017
Toshiba Memory Corporation, Minato-ku, JP;
Kazuharu Yamabe, Yokkaichi, JP;
Ryota Suzuki, Yokkaichi, JP;
Tatsuo Izumi, Yokkaichi, JP;
Masahiro Fukuda, Kuwana, JP;
Takuo Ohashi, Kuwana, JP;
TOSHIBA MEMORY CORPORATION, Minato-ku, JP;
Abstract
A semiconductor memory device includes a conductive layer; a first electrode layer provided above the conductive layer; a second electrode layer provided between the conductive layer and the first electrode layer; a first semiconductor channel body extending through the first electrode layer in a first direction from the conductive layer to the first electrode layer; a second semiconductor channel body provided between the conductive layer and the first semiconductor channel body, the second semiconductor channel body extending through the second electrode layer; and an insulating layer provided between the second semiconductor channel body and the second electrode layer. The second semiconductor channel body includes a first recessed portion in a lateral surface facing the second electrode layer, and the second electrode layer includes a second recessed portion in a surface facing the second semiconductor channel body.