The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2019
Filed:
Jan. 04, 2017
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventor:
Hidenobu Fukutome, Seongnam-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); G11C 11/40 (2006.01); H01L 21/8238 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); G11C 11/40 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823871 (2013.01); H01L 27/092 (2013.01); H01L 27/0922 (2013.01); H01L 27/0924 (2013.01); H01L 29/0649 (2013.01);
Abstract
A semiconductor device includes an interlayer insulating film formed on a substrate, a plurality of contacts formed in the interlayer insulating film, and an impurity-doped region formed around the contacts in the interlayer insulating film and along a lengthwise direction of the contacts.