The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2019

Filed:

Mar. 03, 2017
Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Hefei Xinsheng Optoelectronics Technology Co., Ltd., Hefei, CN;

Inventors:

Yudong Liu, Beijing, CN;

Rongcheng Liu, Beijing, CN;

Yunhai Wan, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/027 (2006.01); H01L 21/4757 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/84 (2013.01); H01L 21/0273 (2013.01); H01L 21/02271 (2013.01); H01L 21/47573 (2013.01); H01L 27/12 (2013.01); H01L 27/1214 (2013.01);
Abstract

An array substrate and a manufacturing method thereof are provided. The method for manufacturing the array substrate includes: forming a passivation layer on a base substrate; forming photoresist on the passivation layer, and forming a first photoresist pattern including a photoresist-completely-retained region, a photoresist-partially-retained region and a photoresist-completely-removed region, by exposure and development processes; forming a first through hole in the passivation layer by etching the passivation layer with the first photoresist pattern as a mask; forming a second photoresist pattern by performing ashing on the first photoresist pattern to remove the photoresist in the photoresist-partially-retained region and reduce a thickness of the photoresist in the photoresist-completely-retained region; and etching the passivation layer with the second photoresist pattern as a mask, so as to reduce a thickness of the passivation layer in the photoresist-partially-retained region.


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