The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2019
Filed:
Nov. 28, 2017
Applicant:
Nuvoton Technology Corporation, Hsinchu, TW;
Inventor:
Wen-Ying Wen, Hsinchu, TW;
Assignee:
Nuvoton Technology Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/74 (2006.01); H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/73 (2006.01); H01L 29/735 (2006.01); H01L 21/8249 (2006.01);
U.S. Cl.
CPC ...
H01L 21/8249 (2013.01); H01L 21/74 (2013.01); H01L 27/0229 (2013.01); H01L 29/1008 (2013.01); H01L 29/1095 (2013.01); H01L 29/66234 (2013.01); H01L 29/73 (2013.01); H01L 29/735 (2013.01); H01L 27/0623 (2013.01); H01L 29/0649 (2013.01);
Abstract
Provided is a semiconductor device including a substrate having a P-type conductivity, a buried layer having an N-type conductivity, an NPN bipolar junction transistor (BJT), and a first well region having the P-type conductivity. The buried layer is located on the substrate. The NPN BJT is located on the buried layer. The first well region is located between the buried layer and the NPN BJT. The NPN BJT is separated from the buried layer by the first well region.