The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2019
Filed:
Apr. 06, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Yongkuk Jeong, Yongin-si, KR;
Gi Gwan Park, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Abstract
A method for fabricating a semiconductor device includes forming first gate stacks on a first region of a substrate to be spaced apart by a first distance, forming second gate stacks on a second region of the substrate to be spaced apart by a second distance greater than the first distance, forming a first blocking film along the first gate stacks and the substrate, a thickness of the first blocking film between the first gate stacks being a first thickness, forming a second blocking film along the second gate stacks and the substrate, a thickness of the second blocking film between the second gate stacks being a second thickness different from the first thickness, and removing the first blocking film, the second blocking film, and the substrate to form a first recess between the first gate stacks and a second recess between the second gate stacks.