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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10332788 B1

PDFFull Text
Date of Patent:
Jun. 25, 2019

Filed:

Sep. 28, 2017

Method of manufacturing a semiconductor device using reference pattern

Applicant:

SK Hynix Inc., Icheon-si Gyeonggi-do, KR;

Inventor:

Yoo Hyun Noh, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, Gyeonggi-do, KR;

Attorney:

William Park & Associates Ltd.

Primary Examiner:

Anthony Ho

Assistant Examiner:

Mohammad M Hoque

Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/768 (2006.01); H01L 27/11548 (2017.01); H01L 27/11551 (2017.01); H01L 27/11531 (2017.01); H01L 27/11575 (2017.01); H01L 27/11578 (2017.01); H01L 23/544 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 27/11573 (2017.01);
U.S. Cl.
CPC ...
H01L 21/76816 (2013.01); H01L 21/76877 (2013.01); H01L 22/12 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/544 (2013.01); H01L 27/11531 (2013.01); H01L 27/11548 (2013.01); H01L 27/11551 (2013.01); H01L 27/11573 (2013.01); H01L 27/11575 (2013.01); H01L 27/11578 (2013.01); H01L 2223/54426 (2013.01);
Abstract

Provided herein may be a method of manufacturing a semiconductor device. The method may include: forming a first stack in which a first pad region, a second pad region and first dummy region are successively defined; forming a second stack on the first stack; forming a first pad structure and a first reference pattern by patterning the second stack, the first pad structure being disposed on the first pad region and having a stepped shape, the first reference pattern being disposed on the first dummy region of the first stack; forming a first pad mask pattern on the first stack, the first pad mask pattern being aligned by measuring the distance from the first reference pattern thereto and covering the first and second pad regions; and forming a second pad structure having a stepped shape by patterning the second pad region while shrinking the first pad mask pattern.

Find Patent Forward Citations

Noh, Yoo. (2019). Method of manufacturing a semiconductor device using reference pattern (U.S. Patent No. 10332788). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10332788

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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