The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2019
Filed:
May. 26, 2016
Toyoda Gosei Co., Ltd., Kiyosu, JP;
Takaki Niwa, Kiyosu, JP;
Takahiro Fujii, Kiyosu, JP;
Masayoshi Kosaki, Kiyosu, JP;
Tohru Oka, Kiyosu, JP;
TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;
Abstract
There is provided a method of manufacturing a nitride semiconductor device. The method of manufacturing the nitride semiconductor device comprises: a first film forming process that forms a first film on a nitride semiconductor layer; an ion implantation process that implants a P-type impurity into the nitride semiconductor layer through the first film by ion implantation; a second film forming process that forms a second film on the first film, after the ion implantation process; and a heat treatment process that processes the nitride semiconductor layer by heat treatment after the second film forming process. This suppresses the surface of the nitride semiconductor layer from being roughened.