The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2019

Filed:

Jan. 09, 2017
Applicant:

Comsats Institute of Information Technology, Islamabad, PK;

Inventors:

Arshad Saleem Bhatti, Islamabad, PK;

Muhammad Hafeez, Islamabad, PK;

Shania Rehman, Islamabad, PK;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C09K 11/56 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02653 (2013.01); C09K 11/565 (2013.01); H01L 21/02381 (2013.01); H01L 21/02488 (2013.01); H01L 21/02557 (2013.01); H01L 21/02581 (2013.01); H01L 21/02603 (2013.01); H01L 21/02645 (2013.01);
Abstract

A method of synthesizing catalyst doped ZnS nanostructures including preparing a silicon substrate by vacuum depositing a metal catalyst nanostructure on an ultrathin silicon oxide layer, doping a zinc sulfide (ZnS) nanostructure with a catalyst of the metal catalyst nanostructure including at least one of gold (Au), manganese (Mn), and tin (Sn), and modulating ZnS intrinsic defects by the concentration of the catalyst and the size of the ZnS and metal catalyst nanostructures, in which the catalyst is dissolved in a nanowire of the ZnS nanostructure during growth, the concentration of the catalyst in the nanowire is dependent on the size of the catalyst, and the doping is tuned by growth conditions.


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