The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2019
Filed:
Dec. 12, 2017
Samsung Electronics Co., Ltd., Suwon-si, KR;
Doo-hyun Kim, Ansan-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
Provided is a method of operating a nonvolatile memory device including a memory cell array connected to a plurality of lines. The method may include performing a first loop including a first recovery section having a first operation time period, on a first line of the plurality of lines by applying a first voltage for a time period, wherein the first voltage is discharged with a first slope, and performing a second loop after the first loop including a second recovery section having a second operation time period that is different from the first operation time period, on the first line by applying a second voltage for a time period, wherein the second voltage is discharged with a second slope less than the first slope.