The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2019

Filed:

Feb. 24, 2015
Applicant:

Hewlett Packard Enterprise Development Lp, Houston, TX (US);

Inventor:

Yoocharn Jeon, Palo Alto, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 13/0033 (2013.01); G11C 2013/0054 (2013.01); G11C 2013/0057 (2013.01); G11C 2213/72 (2013.01);
Abstract

The resistance state of a memristor in a crossbar array is determined. For instance, a combined reference-sneak current is determined based on a reference voltage, a sense voltage, a non-access voltage, and a voltage applied to a target row line, and a combined read-sneak current is determined based on a read voltage, a sense voltage, a non-access voltage, and a voltage applied to a reference row line. The resistance state of a target memristor is then determined based on the combined reference-sneak current and the combined read-sneak current.


Find Patent Forward Citations

Jeon, Yoocharn. (2019). Determining resistance states of memristors in a crossbar array (U.S. Patent No. 10332595). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10332595

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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