The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2019

Filed:

Dec. 16, 2016
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Takahiko Sasaki, Tokyo, JP;

Go Shikata, San Jose, CA (US);

Tomonori Kurosawa, Zama, JP;

Rieko Funatsuki, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 11/56 (2006.01); G11C 16/34 (2006.01); G11C 16/32 (2006.01); G11C 16/08 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5642 (2013.01); G11C 11/5628 (2013.01); G11C 11/5635 (2013.01); G11C 16/32 (2013.01); G11C 16/3459 (2013.01); G11C 16/08 (2013.01);
Abstract

According to one embodiment, a semiconductor memory device includes first and second memory cells, a word line, first and second bit lines, a sense amplifier and a driver. The first and second memory cells have first and second threshold voltages, respectively. The word line is electrically connected to the first and second memory cells. The first and second bit lines are electrically connected to the first and second memory cells, respectively. The driver increases gradually the voltage of the word line. When the voltage of the word line is increased gradually by the driver, the sense amplifier senses the first and second threshold voltages in ascending order.


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