The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2019
Filed:
Dec. 12, 2017
Applicant:
Advanced Micro Devices, Inc., Santa Clara, CA (US);
Inventor:
Tawfik Ahmed, Austin, TX (US);
Assignee:
Advanced Micro Devices, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/12 (2006.01); G06F 1/3234 (2019.01); G11C 7/22 (2006.01); G11C 11/4074 (2006.01); G11C 7/10 (2006.01); G06F 1/3296 (2019.01);
U.S. Cl.
CPC ...
G11C 7/12 (2013.01); G06F 1/3275 (2013.01); G06F 1/3296 (2013.01); G11C 7/1096 (2013.01); G11C 7/22 (2013.01); G11C 11/4074 (2013.01);
Abstract
A memory device includes a memory cell coupled to a bitline and a bitline complement. A first capacitive structure is charged with a first voltage source such as a memory supply voltage. A second capacitive structure is charged with a second voltage source such as a core supply voltage. A coupling structure selectively and capacitively couples the first capacitive structure and the second capacitive structure to the bitline or the bitline complement, thereby applying a negative bitline write assist to the memory cell during a write operation.