The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2019

Filed:

Jun. 23, 2017
Applicant:

Gyrfalcon Technology Inc., Milpitas, CA (US);

Inventors:

Chyu-Jiuh Torng, Dublin, CA (US);

Lin Yang, Milpitas, CA (US);

Qi Dong, San Jose, CA (US);

Assignee:

Gyrfalcon Technology Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06N 3/04 (2006.01); G06N 3/063 (2006.01); G06F 3/06 (2006.01); G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
G06N 3/063 (2013.01); G06F 3/065 (2013.01); G06F 3/0619 (2013.01); G06F 3/0685 (2013.01); G11C 11/005 (2013.01);
Abstract

CNN based digital IC for AI contains a number of CNN processing units. Each CNN processing unit contains CNN logic circuits operatively coupling to a memory subsystem having first and second memories. The first memory includes an array of magnetic random access memory (RAM) cells for storing weights (e.g., filter coefficients) and the second memory contains SRAM for storing input signals (e.g., imagery data). The first memory may store one-time-programming weights. The memory subsystem may contain a third memory that contains magnetic RAM cells for storing one-time-programming data for security purpose. The magnetic RAM includes STT-RAM or OST-MRAM in SLC or MLC technology.


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