The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2019

Filed:

May. 09, 2017
Applicant:

Gyrfalcon Technology Inc., Milpitas, CA (US);

Inventors:

Chyu-Jiuh Torng, Dublin, CA (US);

Lin Yang, Milpitas, CA (US);

Qi Dong, San Jose, CA (US);

Assignee:

Gyrfalcon Technology Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06N 3/04 (2006.01); G06F 3/06 (2006.01); G06F 13/16 (2006.01); G06F 13/40 (2006.01); G11C 11/56 (2006.01); G11C 11/16 (2006.01); H01L 43/08 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0629 (2013.01); G06F 3/061 (2013.01); G06F 3/0679 (2013.01); G06F 13/1668 (2013.01); G06F 13/4068 (2013.01); G06N 3/04 (2013.01); G11C 11/161 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 11/5607 (2013.01); H01L 27/222 (2013.01); H01L 43/08 (2013.01); Y02D 10/14 (2018.01); Y02D 10/151 (2018.01);
Abstract

CNN based digital IC for AI contains a number of CNN processing units. Each CNN processing unit contains CNN logic circuits operatively coupling to a memory subsystem. A first subsystem includes an array of first magnetic random access memory (RAM) cells for storing weights and an array of second magnetic RAM cells for storing input signals. A second subsystem includes an array of first magnetic RAM cells for storing one-time-programming weights and an array of second magnetic RAM cells for storing input signals. A third subsystem includes an array of first magnetic RAM cells for storing weights, an array of second magnetic RAM cells for storing input signals and an array of third magnetic RAM cells for storing one-time-programming unique data pattern for security identification. Either MLC STT-RAM or MLC OST-MRAM containing at least two MTJ elements can be configured as different memories for forming memory subsystem.


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