The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2019
Filed:
Apr. 03, 2017
Applicant:
Gyrfalcon Technology Inc., Milpitas, CA (US);
Inventors:
Assignee:
Gyrfalcon Technology Inc., Milpitas, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06N 3/04 (2006.01); G06F 3/06 (2006.01); G11C 11/16 (2006.01); G06F 13/16 (2006.01); G06F 13/40 (2006.01); H01L 27/22 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0629 (2013.01); G06F 3/061 (2013.01); G06F 3/0688 (2013.01); G06F 13/16 (2013.01); G06F 13/4068 (2013.01); G06N 3/04 (2013.01); G11C 11/161 (2013.01); H01L 27/222 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01);
Abstract
Embedded memory subsystems in a digital integrated circuit for artificial intelligence are disclosed. A semi-conductor substrate contains CNN processing units. Each CNN processing unit includes CNN logic circuits and an embedded memory subsystem. The memory subsystem includes first memory and second memory. The first memory contains an array of MTJ STT-RAM cells with each cell has a circular planar area with a diameter in a range of 40-120 nm. The second memory contains an array of MTJ STT-RAM cells with each cell has a circular planar area having a diameter in a range of 30-75 nm.