The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2019

Filed:

Jan. 27, 2017
Applicant:

Oki Data Corporation, Tokyo, JP;

Inventors:

Hironori Furuta, Takasaki, JP;

Genichiro Matsuo, Takasaki, JP;

Shinya Jumonji, Gunma, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03G 15/04 (2006.01); H01L 33/62 (2010.01); H01L 33/30 (2010.01); H01L 33/38 (2010.01); H01L 25/075 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
G03G 15/04036 (2013.01); G03G 15/04054 (2013.01); H01L 25/0753 (2013.01); H01L 33/0041 (2013.01); H01L 33/30 (2013.01); H01L 33/38 (2013.01); H01L 33/62 (2013.01);
Abstract

A light emitting element device includes: a light emitting thyristor having a layered structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, a third semiconductor layer of the first conductivity type, and a fourth semiconductor layer of the second conductivity type that are layered in this order; and a gate electrode for supplying gate current to the light emitting thyristor. The light emitting thyristor includes an etching stop layer disposed on a surface of the third semiconductor layer or included in the third semiconductor layer, the etching stop layer being a semiconductor layer having an etching rate lower than an etching rate of a semiconductor layer adjacent to the etching stop layer.


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