The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2019
Filed:
May. 27, 2016
Sharp Kabushiki Kaisha, Sakai, Osaka, JP;
Masahiro Yoshida, Sakai, JP;
Masakatsu Tominaga, Sakai, JP;
Tomoo Furukawa, Sakai, JP;
Junichi Morinaga, Sakai, JP;
SHARP KABUSHIKI KAISHA, Sakai, Osaka, JP;
Abstract
A drain electrodeof a TFToverlaps with a gate electrode formed integrally with a gate line. A pixel electrodehas a main body part formed on a first side of the gate line, and an extension part extending in an extending direction of a data lineand covering an overlapping portion of the gate electrode and the drain electrode. The drain electrodeis not formed on a second side of the gate line, whereas the extension part of the pixel electrodeis formed also on the second side of the gate line. Even when a position of the pixel electrodeis shifted in the extending direction of the data line, a parasitic capacitance between a drain and a source of the TFTis kept constant, because an area of a portion where the extension part of the pixel electrodeoverlaps with the gate linedoes not change. With this, degradation of display quality due to a variation in the parasitic capacitance between the gate and drain of the TFTcan be prevented.