The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2019

Filed:

Apr. 17, 2018
Applicant:

Ciena Corporation, Hanover, MD (US);

Inventors:

Nicolás Abadía Calvo, Ville de Québec, CA;

Luhua Xu, Montreal, CA;

David Patel, Montreal, CA;

David V. Plant, Montreal, CA;

Mahdi Parvizi, Ottawa, CA;

Naim Ben-Hamida, Ottawa, CA;

Assignee:

Ciena Corporation, Hanover, MD (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/025 (2006.01);
U.S. Cl.
CPC ...
G02F 1/025 (2013.01); G02F 2201/30 (2013.01); G02F 2202/104 (2013.01); G02F 2203/50 (2013.01);
Abstract

A semiconductor waveguide device includes a first semiconductor layer having a first surface, wherein the first surface comprises a first protrusion and a second protrusion collectively forming a first trench in the first semiconductor layer, a second semiconductor layer having a second surface opposing the first surface of the first semiconductor layer, and an insulator layer disposed between and in contact with the first surface and the second surface, wherein the first semiconductor layer, the second semiconductor layer, and the insulator layer form a semiconductor waveguide region, and wherein the first trench is configured to confine a mode of light beam propagation in the semiconductor waveguide region.


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